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  GP1S036HEZ 1 sheet no.: d3-a05601en date oct. 3. 2005 ? sharp corporation notice the content of data sheet is subject to change without prior notice. in the absence of con rmation by device speci cation sheets, sharp takes no responsibility for any defects that may occur in equipment using any sharp devices shown in catalogs, data books, etc. contact sharp in order to obtain the latest device speci cation sheets before using any sharp device. GP1S036HEZ phototransistor output, transmissive photointerrupter with tilt direction (4-direction) detecting description gp1s36j0000f is a compact-package, phototransis- tor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides a ball built-in case sensing. the compact package series is a result of unique technology combing transfer and injec- tion molding. this is a 2-phase output device, suitable for detection of the position (4 direction). features 1. transmissive with phototransistor output 2. highlights : ? built-in a ball (2 phase output) ? compact ? pwb mounting type ? 4-direction detection 3. lead free and rohs directive compliant agency approvals/compliance 1. compliant with rohs directive applications 1. general purpose detection of device direction. 2. example : camera, dsc, camcorder, robot
2 sheet no.: d3-a05601en GP1S036HEZ internal connection diagram pt 2 pt 1 1 1 2 2 3 3 anode cathode emitter 2 4 4 5 5 emitter 1 collector 4.5 top view or show gate position ? 3.35 ? 1.27 ? 1.27 4.6 0.15 0.4 5 2.8 0.3 1 2 3 5 4 sharp mark ?s? date code outline dimensions (unit : mm) product mass : approx. 0.2g ? unspeci ed tolerance : 0.2mm ? the dimensions indicated by ? refer to those measured from the lead base. ? burr is not included in the dimensions. burr's dimensions : 0.15max. plating material : sncu (cu : typ. 2%)
3 sheet no.: d3-a05601en GP1S036HEZ repeats in a 10 year cycle date code (2 digit) 1st digit 2nd digit year of production month of production a.d. mark month mark 2000 0 1 1 2001 1 2 2 2002 2 3 3 2003 3 4 4 2004 4 5 5 2005 5 6 6 2006 6 7 7 2007 7 8 8 2008 8 9 9 2009 9 10 x 2010 0 11 y : : 12 z country of origin japan, china
4 sheet no.: d3-a05601en GP1S036HEZ (t a = 25 ? c) parameter symbol rating unit input forward current i f 50 ma reverse voltage v r 6v power dissipation p 75 mw output collector-emitter voltage v ce1o v ce2o 35 v emitter-collector voltage v e1co v e2co 6v collector current i c 20 ma collector power dissipation p c 75 mw total power dissipation p tot 100 mw operating temperature t opr ? 25 to + 85 ? c storage temperature t stg ? 40 to + 100 ? c ? 1 soldering temperature t sol 260 ? c ? 1 for max. 5s absolute maximum ratings electro-optical characteristics (t a = 25 ? c) parameter symbol condition min. typ. max. unit input forward voltage v f i f = 20ma ? 1.2 1.4 v reverse current i r v r = 3v ?? 10 a ? 3 output dark current i ceo v ce = 20v ?? 100 na ? 3 transfer charac- teristics collector current i c v ce = 5v, i f = 5ma 55 ? 300 a ? 4 leak current i leak v ce = 5v, i f = 5ma ?? 17 a collector-emitter saturation voltage v ce(sat) i f = 10ma, i c = 55 a ?? 0.4 v response time rise time t r v ce = 5v, i c = 100 a, r l = 1k ? 50 150 s fall time t f ? 50 150 s ? 3 output and coupling characteristics are common to the both phototransistors. ? 4 characteristics except leak current is measured at = 180 ? , = 0 ? . leak current is the output current of transistor when = +90 ? or -90 ? , = 0 ? and i c = off. 1mm min. soldering area
5 sheet no.: d3-a05601en GP1S036HEZ (i f = 5ma, v cc = 5v, 5) 0 ? 30 ? 60 ? 120 ? 150 ? 210 ? i c1 off inde nite on i c2 off inde nite on inde nite ? 240 ? 300 ? 330 ? 360 ? i c1 on inde nite off i c2 inde nite off i c1 : output current of phototransistors pt 1 i c2 : output current of phototransistors pt 2 : device condition : refer to the gure : device condition : refer to the gure on :output current of phototransistors : 55 a or more off : output current of phototransistors : 17 a or less ? output of on/off is under the condition that the device is in stationary state. absolute maximum ratings pt gravity direction + ? gravity direction (viewing from detecting side) + ? device state diagram supplement principle of tilt detection (viewing from detecting side) pt 1 output pt 2 output (on) (on) (on) (on) (on) (off) (off) (off) (off) (on) pt 1 pt 2 pt 2 gravity direction pt 1 pt : detected pt : undetected
6 sheet no.: d3-a05601en GP1S036HEZ fig.5 collector current vs. collector-emitter voltage fig.6 relative collector current vs. ambient temperature fig.3 forward current vs. forward voltage fig.4 collector current vs. forward current fig.1 forward current vs. ambient temperature fig.2 power dissipation vs. ambient temperature ? 25 0 25 50 75 100 0 10 20 30 40 50 60 85 forward current i f (ma) ambient temperature t a ( ? c) ? 25 0 25 50 75 100 0 20 15 40 60 power dissipation p (mw) 80 75 85 100 120 ambient temperature t a ( ? c) p tot p, p c 0 0.5 1 1.5 2 1 10 100 2.5 3 25 ? c 0 ? c ? 25 ? c 50 ? c 3.5 forward current i f (ma) forward voltage v f (v) ta = 75 ? c collector current i c (ma) 0 1 0.8 0.6 0.4 0.2 1.2 1.4 1.6 1.8 2 2.2 01020 5 15253545 30 40 50 forward current i f (ma) t a = 25c v ce = 5v collector current i c (ma) 0 1 0.8 0.6 0.4 0.2 1.2 1.4 1.6 1.8 2 2.2 024 13579 6810 collector-emitter voltage v ce (v) t a = 25c i f = 50ma i f = 40ma i f = 30ma i f = 20ma i f = 10ma i f = 5ma relative collector current ( % ) 0 10 20 30 40 50 60 70 80 90 100 110 120 ? 250 255075 i f = 5ma v ce = 5v i c = 100% at ta=25 ? c ambient temperature t a (c)
7 sheet no.: d3-a05601en GP1S036HEZ fig.7 collector-emitter saturation voltage vs. ambient temperature fig.8 response time vs. load resistance fig.9 collector dark current vs. ambient temperature fig.10 test circuit for response time remarks : please be aware that all data in the graph are just for reference and not for guarantee. collector-emitter saturation voltage v ce(sat) (v) 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 ? 25 0 25 50 75 85 i f = 10ma i c = 60 a ambient temperature t a (c) collector dark current i ceo (a) 10 -10 10 -9 10 -8 10 -7 10 -6 100 75 50 25 0 ambient temperature t a (c) v ce = 20v 10% output input 90% input output v cc r l r d t d t s t f t r response time t r , t f , t d , t s ( s) 0.1 10 1 100 1 000 0.1 100 10 1 load resistance r l (k ) v ce = 5v i c = 100 a t a = 25c t r t d t s t f
8 sheet no.: d3-a05601en GP1S036HEZ design considerations design guide 1) prevention of malfunction to prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. please con rm that there is no mis-operation by magnetic eld in use, for prevention of mis-operation by magnetic eld. please don't let the device put in change of temperature that makes dew for prevention of mis-operation by dew. if the device is put in the change of temperature which makes dew, please leave the device for enough time in the constant temperature for use. this product is not designed against irradiation and incorporates non-coherent ired. degradation in general, the emission of the ired used in photointerrupter will degrade over time. in the case of long term operation, please take the general ired degradation (50% degradation over 5 years) into the design consideration. parts this product is assembled using the below parts. ? photodetector (qty. : 1) category material maximum sensitivity wavelength (nm) sensitivity wavelength (nm) response time ( s) phototransistor silicon (si) 800 700 to 1 200 12 ? photo emitter (qty. : 1) category material maximum light emitting wavelength (nm) i/o frequency (mhz) infrared emitting diode (non-coherent) gallium arsenide (gaas) 950 0.3 ? material case lead frame lead frame plating packing case metal ball black polyphenylene sul de resin (ul94 v-0) 42alloy sncu plating polycarbonate fe
9 sheet no.: d3-a05601en GP1S036HEZ manufacturing guidelines soldering method flow soldering: soldering should be completed below 260 ? c and within 5 s. please solder within one time. soldering area is 1mm or more away from the bottom of housing. please take care not to let any external force exert on lead pins. please don't do soldering with preheating, and please don't do soldering by re ow. lead pin lead terminals of this product are tin copper alloy plated. before usage, please evaluate solderability with actual conditions and con rm. and the uniformity in color for the lead terminals are not speci ed. other notice please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and pcb varies depending on the tooling and soldering conditions. cleaning instructions the device shall not be washed with washing material, for there is possibility to remain washing material in internal space of this transmissive type photointerrupter. presence of odc this product shall not contain the following materials. and they are not used in the production process for this product. regulation substances : cfcs, halon, carbon tetrachloride, 1.1.1-trichloroethane (methylchloroform) speci c brominated ame retardants such as the pbbos and pbbs are not used in this product at all. this product shall not contain the following materials banned in the rohs directive (2002/95/ec). ?lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (pbb), polybrominated diphenyl ethers (pbde).
10 sheet no.: d3-a05601en GP1S036HEZ package speci cation sleeve package package materials sleeve : polystyrene stopper : styrene-elastomer package method max. 40 pcs. of products shall be packaged in a sleeve. both ends shall be closed by tabbed and tabless stoppers. max. 50 sleeves in one case.
11 sheet no.: d3-a05601en GP1S036HEZ important notices the circuit application examples in this publication are provided to explain representative applications of sharp devices and are not intended to guarantee any circuit design or license any intellectual property rights. sharp takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of sharp's devices. contact sharp in order to obtain the latest device specification sheets before using any sharp device. sharp reserves the right to make changes in the speci cations, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. manufacturing locations are also subject to change without notice. observe the following points when using any devices in this publication. sharp takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used speci ed in the relevant speci cation sheet nor meet the following conditions: (i) the devices in this publication are designed for use in general electronic equipment designs such as: --- personal computers --- of ce automation equipment --- telecommunication equipment [terminal] --- test and measurement equipment --- industrial control --- audio visual equipment --- consumer electronics (ii) measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when sharp devices are used for or in connection with equipment that requires higher reliability such as: --- transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- traf c signals --- gas leakage sensor breakers --- alarm equipment --- various safety devices, etc. (iii) sharp devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- space applications --- telecommunication equipment [trunk lines] --- nuclear power control equipment --- medical and other life support equipment (e.g., scuba). if the sharp devices listed in this publication fall within the scope of strategic products described in the foreign exchange and foreign trade law of japan, it is necessary to obtain approval to export such sharp devices. this publication is the proprietary product of sharp and is copyrighted, with all rights reserved. under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of sharp. express written permission is also required before any use of this publication may be made by a third party. contact and consult with a sharp representative if there are any questions about the contents of this publication. [h181]


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